Infineon IPD95R450P7: A High-Performance 950V CoolMOS™ P7 Power Transistor

In the realm of high-voltage power conversion, achieving an optimal balance between efficiency, power density, and reliability is a constant engineering challenge. The Infineon IPD95R450P7 stands out as a formidable solution, engineered to meet the rigorous demands of modern switch-mode power supplies (SMPS), industrial drives, and renewable energy systems. As part of Infineon's esteemed CoolMOS™ P7 series, this 950V superjunction MOSFET is designed to push the boundaries of performance.

The cornerstone of the IPD95R450P7 is its exceptionally low effective dynamic drain-source resistance (R DS(eff)) of just 450mΩ maximum. This ultra-low on-resistance is pivotal in minimizing conduction losses, which directly translates to higher efficiency and reduced heat generation. Even at elevated temperatures, the device maintains stable performance, a critical factor for systems operating under continuous load.

Beyond static losses, switching performance is paramount. The CoolMOS™ P7 technology incorporates advanced packaging and chip design to achieve superior switching behavior and minimal gate charge (Q G). This results in significantly reduced switching losses, allowing for higher operating frequencies. Designers can leverage this to use smaller passive components like inductors and capacitors, thereby increasing the overall power density of the end application.

Robustness is another key hallmark of this transistor. The 950V breakdown voltage provides a substantial safety margin, enhancing system reliability in harsh environments and protecting against voltage spikes commonly encountered in industrial and automotive settings. Furthermore, the device offers an integrated fast body diode with excellent reverse recovery characteristics, which is essential for hard-switching topologies like power factor correction (PFC) stages.

The combination of high voltage capability, low losses, and strong ruggedness makes the IPD95R450P7 an ideal choice for a wide range of applications. It is particularly suited for:

Server & Telecom SMPS: Where efficiency standards like 80 Plus Titanium are mandatory.

Industrial Power Supplies: Demanding high reliability in challenging conditions.

Photovoltaic Inverters: Requiring high voltage handling and efficiency for energy harvesting.

Electric Vehicle Charging Infrastructure: Needing robust and compact power solutions.

ICGOOODFIND: The Infineon IPD95R450P7 exemplifies the evolution of high-voltage power MOSFETs. It successfully merges the seemingly conflicting goals of minimizing power losses and maximizing power density without compromising on the ruggedness required for industrial-grade applications. Its technical merits make it a top-tier component for engineers designing the next generation of efficient and compact power systems.

Keywords: CoolMOS™ P7, High Voltage MOSFET, Low R DS(on), High Efficiency, Power Density