Intel TE28F320B3BA110 32Mb 3V Flash Memory Chip Datasheet and Technical Overview

The Intel TE28F320B3BA110 is a high-performance 32-megabit (4MB) 3-volt flash memory chip designed for a wide range of embedded applications requiring reliable non-volatile storage. Fabricated on Intel's advanced StrataFlash™ memory technology, this device offers an optimal balance of density, power efficiency, and read/write performance, making it a suitable solution for telecommunications infrastructure, networking equipment, industrial control systems, and automotive electronics.

A key feature of this memory chip is its 3.0-volt single power supply (VCC), which simplifies system power design and reduces overall power consumption compared to 5V alternatives. The device supports a standard asynchronous memory interface, ensuring broad compatibility with various microcontrollers and processors without the need for complex timing controllers. Its architecture is organized as 4,194,304 words x 8 bits or 2,097,152 words x 16 bits, providing design flexibility for both 8-bit and 16-bit systems.

The TE28F320B3BA110 excels in performance with a fast 70ns maximum access time for read operations, enabling efficient code execution directly from flash (XIP - Execute-In-Place). For programming and erase operations, it incorporates an intelligent Command User Interface (CUI), which allows for automated write and erase algorithms managed by an embedded state machine. This simplifies software overhead by eliminating the need for the host system to manage precise timing pulses. The chip supports block erase operations, where the main memory array is divided into multiple erase blocks, permitting individual sectors to be erased and reprogrammed without affecting others, thus enhancing flexibility in data management.

Hardware and software data protection mechanisms are integral to its design. Features include a programming lockout during power transitions and absolute protection against accidental erasure or programming through volatile and non-volatile lock registers. Furthermore, it offers a hardware reset (RP) pin that provides a method to immediately terminate an operation and reset the device to a read mode, ensuring system control and stability.

Manufactured using Intel's reliable CMOS process, the device guarantees high endurance with a minimum of 100,000 program/erase cycles per block and offers exceptional data retention of up to 20 years. It is available in industry-standard 48-pin TSOP (Thin Small Outline Package), which is suitable for space-constrained PCB designs.

ICGOODFIND: The Intel TE28F320B3BA110 remains a robust and versatile 3V flash memory solution, particularly valued for its proven reliability, efficient power usage, and sector erase capability. Its well-documented architecture and command set make it a dependable choice for legacy and new designs in demanding embedded environments.

Keywords:

Flash Memory

StrataFlash™

Non-volatile Storage

Block Erase

Command User Interface (CUI)